N-channel enhancement mode power MOSFET featuring 600V drain-source voltage and 12A continuous drain current. This single-element transistor offers 440mΩ maximum drain-source resistance at 10V, with a typical gate charge of 13nC at 10V and input capacitance of 710pF at 25V. Housed in a TO-220FP package with 3 pins and a tab, it supports through-hole mounting. Maximum power dissipation is 27.7W, operating temperature range is -55°C to 150°C.
PackageTO-220FP
MountingThrough Hole
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Technical Specifications
Renesas RJK60S3DPP-E0#T2 technical specifications.
General
Basic Package Type
Through Hole
Package Family Name
TO-220
Package/Case
TO-220FP
Package Description
Transistor Outline Package Fullpak
Lead Shape
Through Hole
Pin Count
3
PCB
3
Tab
Tab
Package Length (mm)
10.16
Package Width (mm)
4.7
Package Height (mm)
15.87
Seated Plane Height (mm)
19.05
Pin Pitch (mm)
2.54
Package Material
Plastic
Mounting
Through Hole
Configuration
Single
Category
Power MOSFET
Channel Mode
Enhancement
Channel Type
N
Number of Elements per Chip
1
Maximum Drain Source Voltage
600V
Maximum Gate Source Voltage
30V
Maximum Continuous Drain Current
12A
Maximum Drain Source Resistance
440@10VmOhm
Typical Gate Charge @ Vgs
13@10VnC
Typical Gate Charge @ 10V
13nC
Typical Input Capacitance @ Vds
710@25VpF
Maximum Power Dissipation
27700mW
Min Operating Temperature
-55°C
Max Operating Temperature
150°C
Compliance
Cage Code
SAN34
EU RoHS
Yes with Exemption
HTS Code
8541290095
Schedule B
8541290080
ECCN
EAR99
Automotive
No
AEC Qualified
No
PPAP
No
RoHS Versions
2011/65/EU, 2015/863
Datasheet
Renesas RJK60S3DPP-E0#T2 Datasheet
Download the complete datasheet for Renesas RJK60S3DPP-E0#T2 to view detailed technical specifications.
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