N-channel enhancement mode power MOSFET featuring 600V drain-source voltage and 12A continuous drain current. This single-element transistor offers 440mΩ maximum drain-source resistance at 10V, with a typical gate charge of 13nC at 10V and input capacitance of 710pF at 25V. Housed in a TO-220FP package with 3 pins and a tab, it supports through-hole mounting. Maximum power dissipation is 27.7W, operating temperature range is -55°C to 150°C.
PackageTO-220FP
MountingThrough Hole
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Technical Specifications
Renesas RJK60S3DPP-E0#T2 technical specifications.
General
| Basic Package Type | Through Hole |
| Package Family Name | TO-220 |
| Package/Case | TO-220FP |
| Package Description | Transistor Outline Package Fullpak |
| Lead Shape | Through Hole |
| Pin Count | 3 |
| PCB | 3 |
| Tab | Tab |
| Package Length (mm) | 10.16 |
| Package Width (mm) | 4.7 |
| Package Height (mm) | 15.87 |
| Seated Plane Height (mm) | 19.05 |
| Pin Pitch (mm) | 2.54 |
| Package Material | Plastic |
| Mounting | Through Hole |
| Configuration | Single |
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 600V |
| Maximum Gate Source Voltage | 30V |
| Maximum Continuous Drain Current | 12A |
| Maximum Drain Source Resistance | 440@10VmOhm |
| Typical Gate Charge @ Vgs | 13@10VnC |
| Typical Gate Charge @ 10V | 13nC |
| Typical Input Capacitance @ Vds | 710@25VpF |
| Maximum Power Dissipation | 27700mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
Compliance
| Cage Code | SAN34 |
| EU RoHS | Yes with Exemption |
| HTS Code | 8541290095 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| RoHS Versions | 2011/65/EU, 2015/863 |
Datasheet
Renesas RJK60S3DPP-E0#T2 Datasheet
Download the complete datasheet for Renesas RJK60S3DPP-E0#T2 to view detailed technical specifications.
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