N-channel enhancement mode power MOSFET with a maximum drain-source voltage of 600V and continuous drain current of 16A. Features a low on-resistance of 290mΩ at 10V and a typical gate charge of 18nC at 10V. Packaged in a TO-220FP (Fullpak) with 3 through-hole pins and a tab, offering a maximum power dissipation of 29900mW. Operating temperature range from -55°C to 150°C.
PackageTO-220FP
MountingThrough Hole
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Technical Specifications
Renesas RJK60S4DPP-E0#T2 technical specifications.
General
Basic Package Type
Through Hole
Package Family Name
TO-220
Package/Case
TO-220FP
Package Description
Transistor Outline Package Fullpak
Lead Shape
Through Hole
Pin Count
3
PCB
3
Tab
Tab
Package Length (mm)
10.16
Package Width (mm)
4.7
Package Height (mm)
15.87
Seated Plane Height (mm)
19.05
Pin Pitch (mm)
2.54
Package Material
Plastic
Mounting
Through Hole
Configuration
Single
Category
Power MOSFET
Channel Mode
Enhancement
Channel Type
N
Number of Elements per Chip
1
Maximum Drain Source Voltage
600V
Maximum Gate Source Voltage
30V
Maximum Continuous Drain Current
16A
Maximum Drain Source Resistance
290@10VmOhm
Typical Gate Charge @ Vgs
18@10VnC
Typical Gate Charge @ 10V
18nC
Typical Input Capacitance @ Vds
988@25VpF
Maximum Power Dissipation
29900mW
Min Operating Temperature
-55°C
Max Operating Temperature
150°C
Compliance
Cage Code
SAN34
EU RoHS
Yes with Exemption
HTS Code
8541290095
Schedule B
8541290080
ECCN
EAR99
Automotive
No
AEC Qualified
No
PPAP
No
RoHS Versions
2011/65/EU, 2015/863
Datasheet
Renesas RJK60S4DPP-E0#T2 Datasheet
Download the complete datasheet for Renesas RJK60S4DPP-E0#T2 to view detailed technical specifications.
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