N-channel enhancement mode power MOSFET featuring 600V drain-source voltage and 30A continuous drain current. This single-element transistor utilizes SJMOS process technology and offers a low drain-source on-resistance of 125mOhm at 10V. Packaged in a TO-220FP fullpak with a through-hole mounting style, it operates from -55°C to 150°C. Key specifications include a typical gate charge of 39nC at 10V and a maximum power dissipation of 34.7W.
PackageTO-220FP
MountingThrough Hole
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Technical Specifications
Renesas RJK60S7DPP-E0#T2 technical specifications.
General
Basic Package Type
Through Hole
Package Family Name
TO-220
Package/Case
TO-220FP
Package Description
Transistor Outline Package Fullpak
Lead Shape
Through Hole
Pin Count
3
PCB
3
Tab
Tab
Package Length (mm)
10.16
Package Width (mm)
4.7
Package Height (mm)
15.87
Seated Plane Height (mm)
19.05
Pin Pitch (mm)
2.54
Package Material
Plastic
Mounting
Through Hole
Configuration
Single
Category
Power MOSFET
Channel Mode
Enhancement
Channel Type
N
Number of Elements per Chip
1
Process Technology
SJMOS
Maximum Drain Source Voltage
600V
Maximum Gate Source Voltage
30V
Maximum Continuous Drain Current
30A
Maximum Drain Source Resistance
125@10VmOhm
Typical Gate Charge @ Vgs
39@10VnC
Typical Gate Charge @ 10V
39nC
Typical Input Capacitance @ Vds
2300@25VpF
Maximum Power Dissipation
34700mW
Min Operating Temperature
-55°C
Max Operating Temperature
150°C
Compliance
Cage Code
SAN34
EU RoHS
Yes with Exemption
HTS Code
8541290095
Schedule B
8541290080
ECCN
EAR99
Automotive
No
AEC Qualified
No
PPAP
No
RoHS Versions
2011/65/EU, 2015/863
Datasheet
Renesas RJK60S7DPP-E0#T2 Datasheet
Download the complete datasheet for Renesas RJK60S7DPP-E0#T2 to view detailed technical specifications.
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