N-channel enhancement mode power MOSFET featuring 600V drain-source voltage and 15A continuous drain current. This single-element silicon transistor is housed in a TO-220FN package with 3 pins and a tab, designed for through-hole mounting. Key specifications include a maximum gate-source voltage of ±30V, a drain-source on-resistance of 635mΩ at 10V, and a typical gate charge of 46nC at 10V. Operating temperature range is -55°C to 150°C, with a maximum power dissipation of 35W.
Renesas RJL6014DPP-00-T2 technical specifications.
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