N-channel enhancement mode power MOSFET featuring 600V drain-source voltage and 15A continuous drain current. This single-element silicon transistor is housed in a TO-220FN package with 3 pins and a tab, designed for through-hole mounting. Key specifications include a maximum gate-source voltage of ±30V, a drain-source on-resistance of 635mΩ at 10V, and a typical gate charge of 46nC at 10V. Operating temperature range is -55°C to 150°C, with a maximum power dissipation of 35W.
PackageTO-220FN
MountingThrough Hole
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Technical Specifications
Renesas RJL6014DPP-00-T2 technical specifications.
General
Package Family Name
TO-220
Package/Case
TO-220FN
Pin Count
3
PCB
3
Tab
Tab
Package Length (mm)
10
Package Width (mm)
4.5
Package Height (mm)
15
Seated Plane Height (mm)
18.6
Pin Pitch (mm)
2.54
Package Weight (g)
2
Package Material
Plastic
Mounting
Through Hole
Configuration
Single
Category
Power MOSFET
Channel Mode
Enhancement
Channel Type
N
Number of Elements per Chip
1
Maximum Drain Source Voltage
600V
Maximum Gate Source Voltage
±30V
Maximum Continuous Drain Current
15A
Material
Si
Maximum Drain Source Resistance
635@10VmOhm
Typical Gate Charge @ Vgs
46@10VnC
Typical Gate Charge @ 10V
46nC
Typical Input Capacitance @ Vds
1700@25VpF
Maximum Power Dissipation
35000mW
Min Operating Temperature
-55°C
Max Operating Temperature
150°C
Compliance
Cage Code
SAN34
HTS Code
8541290095
Schedule B
8541290080
ECCN
EAR99
Automotive
No
AEC Qualified
No
PPAP
No
Radiation Hardening
No
Datasheet
Renesas RJL6014DPP-00-T2 Datasheet
Download the complete datasheet for Renesas RJL6014DPP-00-T2 to view detailed technical specifications.
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