The TO-220AB insulated gate bipolar transistor is a single-channel device with a maximum collector-emitter voltage of 600V and a maximum continuous collector current of 40A. It has a maximum power dissipation of 178.5W and a typical collector-emitter saturation voltage of 2.65V. The transistor is packaged in a TO-220AB outline with a plastic case and a through-hole mounting style. It operates over a temperature range of -55°C to 150°C.
PackageTO-220AB
MountingThrough Hole
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Technical Specifications
Renesas RJP6085DPN-00-T2 technical specifications.
General
| Basic Package Type | Through Hole |
| Package Family Name | TO-220 |
| Package/Case | TO-220AB |
| Package Description | Transistor Outline Package |
| Pin Count | 3 |
| PCB | 3 |
| Tab | Tab |
| Package Length (mm) | 11.5(Max) |
| Package Width (mm) | 4.44 |
| Package Height (mm) | 8.6 |
| Pin Pitch (mm) | 2.54 |
| Package Material | Plastic |
| Mounting | Through Hole |
| Jedec | TO-220AB |
| Channel Type | N |
| Configuration | Single |
| Maximum Collector-Emitter Voltage | 600V |
| Maximum Gate Emitter Voltage | ±30V |
| Maximum Continuous Collector Current | 40A |
| Maximum Power Dissipation | 178500mW |
| Typical Collector Emitter Saturation Voltage | 2.65V |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
Compliance
| Cage Code | SAN34 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
Datasheet
Renesas RJP6085DPN-00-T2 Datasheet
Download the complete datasheet for Renesas RJP6085DPN-00-T2 to view detailed technical specifications.
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