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Technical Specifications
Renesas TBB1002 technical specifications.
General
Drain Current-Max (ID)
30mA
DS Breakdown Voltage-Min
6V
Feedback Cap-Max (Crss)
0.04pF
FET Technology
METAL-OXIDE SEMICONDUCTOR
Highest Frequency Band
ULTRA HIGH FREQUENCY BAND
JESD-30 Code
R-PDSO-G6
Number of Elements
2
Package Body Material
Plastic
Package Shape
Rectangular
Package Style
SMALL OUTLINEMeter
Polarity/Channel Type
N-CHANNEL
Qualification Status
Not Qualified
RoHS Compliant
No
Surface Mount
Yes
Terminal Form
Gull Wing
Terminal Position
DUAL
Transistor Application
AMPLIFIER
Transistor Element Material
SILICON
Compliance
RoHS
Not Compliant
Datasheet
Renesas TBB1002 Datasheet
Download the complete datasheet for Renesas TBB1002 to view detailed technical specifications.
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