The UPA1501H-AZ is a metal-oxide semiconductor N-channel MOSFET with a maximum drain current of 3A and a minimum breakdown voltage of 120V. It has a maximum on-resistance of 650mR and a maximum power dissipation of 4W. The device is packaged in a rectangular plastic package with through-hole terminals and is not qualified for automotive applications. It is compliant with RoHS regulations and has a maximum operating temperature of 150°C.
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Technical Specifications
Renesas UPA1501H-AZ technical specifications.
General
| Drain Current-Max (Abs) (ID) | 3A |
| Drain Current-Max (ID) | 3A |
| Drain-source On Resistance-Max | 650mR |
| DS Breakdown Voltage-Min | 120V |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| Max Operating Temperature | 150°C |
| Number of Elements | 4 |
| Package Body Material | Plastic |
| Package Shape | Rectangular |
| Package Style | IN-LINEMeter |
| Peak Reflow Temperature (Cel) | 260°C |
| Polarity/Channel Type | N-CHANNEL |
| Power Dissipation-Max (Abs) | 4W |
| Pulsed Drain Current-Max (IDM) | 12A |
| Qualification Status | Not Qualified |
| RoHS Compliant | Yes |
| Surface Mount | No |
| Terminal Form | Through Hole |
| Terminal Position | SINGLE |
| Time @ Peak Reflow Temperature-Max (s) | 10s |
| Transistor Application | SWITCHING |
| Transistor Element Material | SILICON |
Compliance
| RoHS | Compliant |
Datasheet
Renesas UPA1501H-AZ Datasheet
Download the complete datasheet for Renesas UPA1501H-AZ to view detailed technical specifications.
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