The UPA1706G is a single N-channel metal-oxide semiconductor field-effect transistor (MOSFET) from Renesas. It has a maximum drain current of 13A and a minimum breakdown voltage of 30V. The device features a maximum on-resistance of 12 milliohms and a maximum power dissipation of 2 watts. The UPA1706G is available in a small outline rectangular package made of plastic, with a gull wing terminal form and a tin finish. It is suitable for switching applications and can operate at a maximum temperature of 150°C.
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Technical Specifications
Renesas UPA1706G technical specifications.
General
| Drain Current-Max (Abs) (ID) | 13A |
| Drain Current-Max (ID) | 13A |
| Drain-source On Resistance-Max | 12mR |
| DS Breakdown Voltage-Min | 30V |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| JESD-30 Code | R-PDSO-G8 |
| JESD-609 Code | e0 |
| Max Operating Temperature | 150°C |
| Number of Elements | 1 |
| Package Body Material | Plastic |
| Package Shape | Rectangular |
| Package Style | SMALL OUTLINEMeter |
| Polarity/Channel Type | N-CHANNEL |
| Power Dissipation-Max (Abs) | 2W |
| Pulsed Drain Current-Max (IDM) | 52A |
| Qualification Status | Not Qualified |
| RoHS Compliant | No |
| Surface Mount | Yes |
| Terminal Finish | Tin |
| Terminal Form | Gull Wing |
| Terminal Position | DUAL |
| Transistor Application | SWITCHING |
| Transistor Element Material | SILICON |
Compliance
| RoHS | Not Compliant |
Datasheet
Renesas UPA1706G Datasheet
Download the complete datasheet for Renesas UPA1706G to view detailed technical specifications.
No datasheet is available for this part.