P-channel Power MOSFET, 30V drain-source voltage, 10A continuous drain current. Features 13mΩ maximum drain-source resistance at 10V, 46nC typical gate charge, and 2600pF typical input capacitance. Housed in an 8-pin Power SOP surface-mount package with a 1.27mm pin pitch, measuring 5.37mm(Max) x 4.4mm x 1.44mm. Maximum power dissipation is 2000mW, operating temperature range from -55°C to 150°C.
PackagePower SOP
MountingSurface Mount
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Technical Specifications
Renesas UPA1731G-E1 technical specifications.
General
Package Family Name
SOP
Package/Case
Power SOP
Pin Count
8
PCB
8
Package Length (mm)
5.37(Max)
Package Width (mm)
4.4
Package Height (mm)
1.44
Seated Plane Height (mm)
1.8(Max)
Pin Pitch (mm)
1.27
Package Weight (g)
0.08
Package Material
Plastic
Mounting
Surface Mount
Configuration
Single Quad Drain Triple Source
Category
Power MOSFET
Channel Mode
Enhancement
Channel Type
P
Number of Elements per Chip
1
Maximum Drain Source Voltage
30V
Maximum Gate Source Voltage
±20V
Maximum Continuous Drain Current
10A
Maximum Drain Source Resistance
13@10VmOhm
Typical Gate Charge @ Vgs
46@10VnC
Typical Gate Charge @ 10V
46nC
Typical Input Capacitance @ Vds
2600@10VpF
Maximum Power Dissipation
2000mW
Min Operating Temperature
-55°C
Max Operating Temperature
150°C
Compliance
Cage Code
SAN34
HTS Code
8541290095
Schedule B
8541290080
ECCN
EAR99
Automotive
No
AEC Qualified
No
PPAP
No
Radiation Hardening
No
Datasheet
Renesas UPA1731G-E1 Datasheet
Download the complete datasheet for Renesas UPA1731G-E1 to view detailed technical specifications.
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