N-channel enhancement mode power MOSFET, dual dual drain configuration, with a maximum drain-source voltage of 30V and continuous drain current of 7A. Features low on-resistance of 32mΩ at 10V, typical gate charge of 19nC, and input capacitance of 895pF at 10V. Housed in an 8-pin SOP (Small Outline Package) with gull-wing leads for surface mounting, measuring 5.37mm(Max) x 4.4mm x 1.44mm with a 1.27mm pin pitch. Operates across a wide temperature range from -55°C to 150°C, with a maximum power dissipation of 2000mW.
PackageSOP
MountingSurface Mount
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Technical Specifications
Renesas UPA1755G technical specifications.
General
Basic Package Type
Lead-Frame SMT
Package Family Name
SOP
Package/Case
SOP
Package Description
Plastic Small Outline Package
Lead Shape
Gull-wing
Pin Count
8
PCB
8
Package Length (mm)
5.37(Max)
Package Width (mm)
4.4
Package Height (mm)
1.44
Seated Plane Height (mm)
1.8(Max)
Pin Pitch (mm)
1.27
Package Material
Plastic
Mounting
Surface Mount
Configuration
Dual Dual Drain
Category
Power MOSFET
Channel Mode
Enhancement
Channel Type
N
Number of Elements per Chip
2
Maximum Drain Source Voltage
30V
Maximum Gate Source Voltage
±20V
Maximum Continuous Drain Current
7A
Maximum Drain Source Resistance
32@10VmOhm
Typical Gate Charge @ Vgs
19@10VnC
Typical Gate Charge @ 10V
19nC
Typical Input Capacitance @ Vds
895@10VpF
Maximum Power Dissipation
2000mW
Min Operating Temperature
-55°C
Max Operating Temperature
150°C
Compliance
Cage Code
SAN34
HTS Code
8541290095
Schedule B
8541290080
ECCN
EAR99
Automotive
No
AEC Qualified
No
PPAP
No
Radiation Hardening
No
Datasheet
Renesas UPA1755G Datasheet
Download the complete datasheet for Renesas UPA1755G to view detailed technical specifications.
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