Renesas
uPA1918TE
P-Channel Metal-Oxide Semiconductor Field Effect Transistor, 60V, 3.5A, 2W, 6-Pin R-PDSO-G6
The uPA1918TE is a P-channel metal-oxide semiconductor field effect transistor with a maximum operating temperature of 150°C. It features a drain-source on resistance of 190mΩ and a maximum drain current of 3.5A. The device is packaged in a 6-pin R-PDSO-G6 package with a plastic body and a tin terminal finish. It is suitable for switching applications and is not qualified for automotive use.
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Technical Specifications
Renesas uPA1918TE technical specifications.
General
| Drain Current-Max (Abs) (ID) | 3.5A |
| Drain Current-Max (ID) | 3.5A |
| Drain-source On Resistance-Max | 190mR |
| DS Breakdown Voltage-Min | 60V |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| JESD-30 Code | R-PDSO-G6 |
| JESD-609 Code | e0 |
| Max Operating Temperature | 150°C |
| Number of Elements | 1 |
| Package Body Material | Plastic |
| Package Shape | Rectangular |
| Package Style | SMALL OUTLINEMeter |
| Polarity/Channel Type | P-CHANNEL |
| Power Dissipation-Max (Abs) | 2W |
| Qualification Status | Not Qualified |
| RoHS Compliant | No |
| Surface Mount | Yes |
| Terminal Finish | Tin |
| Terminal Form | Gull Wing |
| Terminal Position | DUAL |
| Transistor Application | SWITCHING |
| Transistor Element Material | SILICON |
Compliance
| RoHS | Not Compliant |
Datasheet
Renesas uPA1918TE Datasheet
Download the complete datasheet for Renesas uPA1918TE to view detailed technical specifications.
No datasheet is available for this part.