The UPA1970TE-T1-AT is a surface mount N-channel metal-oxide semiconductor MOSFET with a maximum drain current of 2.2A and maximum power dissipation of 1.15W. It operates within a temperature range of -40°C to 150°C and is compliant with RoHS regulations. The MOSFET features a terminal finish of tin and has a maximum reflow temperature of 260°C. It is suitable for use in various electronic applications.
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Technical Specifications
Renesas UPA1970TE-T1-AT technical specifications.
General
| Drain Current-Max (Abs) (ID) | 2.2A |
| Drain Current-Max (ID) | 2.2A |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| JESD-609 Code | e3 |
| Max Operating Temperature | 150°C |
| Peak Reflow Temperature (Cel) | 260°C |
| Polarity/Channel Type | N-CHANNEL |
| Power Dissipation-Max (Abs) | 1.15W |
| RoHS Compliant | Yes |
| Surface Mount | Yes |
| Terminal Finish | Tin |
Compliance
| RoHS | Compliant |
Datasheet
Renesas UPA1970TE-T1-AT Datasheet
Download the complete datasheet for Renesas UPA1970TE-T1-AT to view detailed technical specifications.
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