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Technical Specifications
Renesas UPA2200T1M-T1-AT technical specifications.
General
Drain Current-Max (Abs) (ID)
8A
Drain Current-Max (ID)
8A
Drain-source On Resistance-Max
23mR
DS Breakdown Voltage-Min
30V
FET Technology
METAL-OXIDE SEMICONDUCTOR
Max Operating Temperature
150°C
Number of Elements
1
Package Body Material
Plastic
Package Shape
Rectangular
Package Style
SMALL OUTLINEMeter
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (Abs)
2.5W
Pulsed Drain Current-Max (IDM)
32A
Qualification Status
Not Qualified
RoHS Compliant
Yes
Surface Mount
Yes
Terminal Form
Flat
Terminal Position
DUAL
Transistor Application
SWITCHING
Transistor Element Material
SILICON
Compliance
RoHS
Compliant
Datasheet
Renesas UPA2200T1M-T1-AT Datasheet
Download the complete datasheet for Renesas UPA2200T1M-T1-AT to view detailed technical specifications.
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