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Technical Specifications
Renesas UPA2463T1Q-E1-AX technical specifications.
General
Drain Current-Max (Abs) (ID)
6A
Drain Current-Max (ID)
6A
Drain-source On Resistance-Max
28.5mR
DS Breakdown Voltage-Min
20V
FET Technology
METAL-OXIDE SEMICONDUCTOR
JESD-30 Code
R-PDSO-N8
JESD-609 Code
e4
Max Operating Temperature
150°C
Number of Elements
2
Package Body Material
Plastic
Package Shape
Rectangular
Package Style
SMALL OUTLINEMeter
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (Abs)
1W
Qualification Status
Not Qualified
RoHS Compliant
Yes
Surface Mount
Yes
Terminal Finish
Nickel
Terminal Form
No Lead
Terminal Position
DUAL
Transistor Application
SWITCHING
Transistor Element Material
SILICON
Compliance
RoHS
Compliant
Datasheet
Renesas UPA2463T1Q-E1-AX Datasheet
Download the complete datasheet for Renesas UPA2463T1Q-E1-AX to view detailed technical specifications.
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