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Technical Specifications
Renesas UPA2520T1H-T1-AT technical specifications.
General
Drain Current-Max (Abs) (ID)
10A
Drain Current-Max (ID)
10A
Drain-source On Resistance-Max
13.2mR
DS Breakdown Voltage-Min
30V
FET Technology
METAL-OXIDE SEMICONDUCTOR
JESD-609 Code
e3
Max Operating Temperature
150°C
Number of Elements
1
Package Body Material
Plastic
Package Shape
Rectangular
Package Style
SMALL OUTLINEMeter
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (Abs)
2.2W
Qualification Status
Not Qualified
RoHS Compliant
Yes
Surface Mount
Yes
Terminal Finish
Tin
Terminal Form
Flat
Terminal Position
DUAL
Transistor Application
SWITCHING
Transistor Element Material
SILICON
Compliance
RoHS
Compliant
Datasheet
Renesas UPA2520T1H-T1-AT Datasheet
Download the complete datasheet for Renesas UPA2520T1H-T1-AT to view detailed technical specifications.
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