The UPA2521T1H-T2-AT is a single N-channel metal-oxide semiconductor field-effect transistor (MOSFET) from Renesas. It has a maximum drain current of 8A and a minimum breakdown voltage of 30V. The device is rated for a maximum power dissipation of 2.2W and operates within a temperature range of -40°C to 150°C. The UPA2521T1H-T2-AT is available in a small outline rectangular package made of plastic and features a tin terminal finish. It is compliant with the Restriction of Hazardous Substances (RoHS) directive and is suitable for switching applications.
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Technical Specifications
Renesas UPA2521T1H-T2-AT technical specifications.
General
| Drain Current-Max (Abs) (ID) | 8A |
| Drain Current-Max (ID) | 8A |
| Drain-source On Resistance-Max | 16.5mR |
| DS Breakdown Voltage-Min | 30V |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| JESD-609 Code | e3 |
| Max Operating Temperature | 150°C |
| Number of Elements | 1 |
| Package Body Material | Plastic |
| Package Shape | Rectangular |
| Package Style | SMALL OUTLINEMeter |
| Polarity/Channel Type | N-CHANNEL |
| Power Dissipation-Max (Abs) | 2.2W |
| Qualification Status | Not Qualified |
| RoHS Compliant | Yes |
| Surface Mount | Yes |
| Terminal Finish | Tin |
| Terminal Form | Flat |
| Terminal Position | DUAL |
| Transistor Application | SWITCHING |
| Transistor Element Material | SILICON |
Compliance
| RoHS | Compliant |
Datasheet
Renesas UPA2521T1H-T2-AT Datasheet
Download the complete datasheet for Renesas UPA2521T1H-T2-AT to view detailed technical specifications.
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