The UPA2550T1H-T2-AT is a P-channel metal-oxide semiconductor field-effect transistor (MOSFET) with a maximum drain current of 5A and a maximum drain-source on-resistance of 93 milliohms. It has a minimum breakdown voltage of 12V and a maximum power dissipation of 2.2W. The device is packaged in a rectangular plastic package with a terminal finish of tin and a terminal form of flat. It is suitable for switching applications and has a maximum operating temperature of 150°C. The device is RoHS compliant and is suitable for surface mount applications.
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Technical Specifications
Renesas UPA2550T1H-T2-AT technical specifications.
General
| Drain Current-Max (Abs) (ID) | 5A |
| Drain Current-Max (ID) | 5A |
| Drain-source On Resistance-Max | 93mR |
| DS Breakdown Voltage-Min | 12V |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| JESD-609 Code | e3 |
| Max Operating Temperature | 150°C |
| Number of Elements | 2 |
| Package Body Material | Plastic |
| Package Shape | Rectangular |
| Package Style | SMALL OUTLINEMeter |
| Polarity/Channel Type | P-CHANNEL |
| Power Dissipation-Max (Abs) | 2.2W |
| Pulsed Drain Current-Max (IDM) | 20A |
| Qualification Status | Not Qualified |
| RoHS Compliant | Yes |
| Surface Mount | Yes |
| Terminal Finish | Tin |
| Terminal Form | Flat |
| Terminal Position | DUAL |
| Transistor Application | SWITCHING |
| Transistor Element Material | SILICON |
Compliance
| RoHS | Compliant |
Datasheet
Renesas UPA2550T1H-T2-AT Datasheet
Download the complete datasheet for Renesas UPA2550T1H-T2-AT to view detailed technical specifications.
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