The UPA2660T1R-E2-AX is a surface mount N-channel MOSFET with a maximum drain current of 4A and on-resistance of 62 milliohms. It operates at a minimum breakdown voltage of 20V and can dissipate up to 2.3 watts of power. This device is compliant with RoHS and SVHC regulations and is suitable for use in high-temperature environments up to 150°C.
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Technical Specifications
Renesas UPA2660T1R-E2-AX technical specifications.
General
| Drain Current-Max (Abs) (ID) | 4A |
| Drain Current-Max (ID) | 4A |
| Drain-source On Resistance-Max | 62mR |
| DS Breakdown Voltage-Min | 20V |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| JESD-609 Code | e4 |
| Max Operating Temperature | 150°C |
| Polarity/Channel Type | N-CHANNEL |
| Power Dissipation-Max (Abs) | 2.3W |
| Reach SVHC Compliant | Yes |
| RoHS Compliant | Yes |
| Surface Mount | Yes |
| Terminal Finish | Nickel |
Compliance
| RoHS | Compliant |
Datasheet
Renesas UPA2660T1R-E2-AX Datasheet
Download the complete datasheet for Renesas UPA2660T1R-E2-AX to view detailed technical specifications.
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