N-channel MOSFET with a 30V drain-source breakdown voltage and a maximum continuous drain current of 17A, capable of handling pulsed drain currents up to 68A. Features a low drain-source on-resistance of 7.5mR and a maximum power dissipation of 2.5W. This surface-mount component utilizes METAL-OXIDE SEMICONDUCTOR FET technology, packaged in a rectangular, small outline plastic body with gull wing terminals. Designed for switching applications, it operates up to a maximum temperature of 150°C and is RoHS compliant.
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Technical Specifications
Renesas UPA2708GR-E1-A technical specifications.
General
| Avalanche Energy Rating (Eas) | 28.9mJ |
| Drain Current-Max (Abs) (ID) | 17A |
| Drain Current-Max (ID) | 17A |
| Drain-source On Resistance-Max | 7.5mR |
| DS Breakdown Voltage-Min | 30V |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| JESD-30 Code | R-PDSO-G8 |
| JESD-609 Code | e6 |
| Max Operating Temperature | 150°C |
| Number of Elements | 1 |
| Package Body Material | Plastic |
| Package Shape | Rectangular |
| Package Style | SMALL OUTLINEMeter |
| Polarity/Channel Type | N-CHANNEL |
| Power Dissipation-Max (Abs) | 2.5W |
| Pulsed Drain Current-Max (IDM) | 68A |
| Qualification Status | Not Qualified |
| RoHS Compliant | Yes |
| Surface Mount | Yes |
| Terminal Finish | Tin |
| Terminal Form | Gull Wing |
| Terminal Position | DUAL |
| Transistor Application | SWITCHING |
| Transistor Element Material | SILICON |
Compliance
| RoHS | Compliant |
Datasheet
Renesas UPA2708GR-E1-A Datasheet
Download the complete datasheet for Renesas UPA2708GR-E1-A to view detailed technical specifications.
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