The UPA2716AGR-E1-AT is a P-channel metal-oxide semiconductor field-effect transistor (MOSFET) with a maximum operating temperature of 150°C. It features a drain current maximum of 14A, a drain-source on resistance maximum of 13.5mΩ, and a power dissipation maximum of 2W. The device is packaged in a small outline, R-PDSO-G8, and is compliant with RoHS regulations. It is suitable for switching applications and is manufactured by Renesas.
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Technical Specifications
Renesas UPA2716AGR-E1-AT technical specifications.
General
| Avalanche Energy Rating (Eas) | 19.6mJ |
| Drain Current-Max (Abs) (ID) | 14A |
| Drain Current-Max (ID) | 14A |
| Drain-source On Resistance-Max | 13.5mR |
| DS Breakdown Voltage-Min | 30V |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| JESD-30 Code | R-PDSO-G8 |
| Max Operating Temperature | 150°C |
| Number of Elements | 1 |
| Package Body Material | Plastic |
| Package Shape | Rectangular |
| Package Style | SMALL OUTLINEMeter |
| Polarity/Channel Type | P-CHANNEL |
| Power Dissipation-Max (Abs) | 2W |
| Pulsed Drain Current-Max (IDM) | 140A |
| Qualification Status | Not Qualified |
| RoHS Compliant | Yes |
| Surface Mount | Yes |
| Terminal Form | Gull Wing |
| Terminal Position | DUAL |
| Transistor Application | SWITCHING |
| Transistor Element Material | SILICON |
Compliance
| RoHS | Compliant |
Datasheet
Renesas UPA2716AGR-E1-AT Datasheet
Download the complete datasheet for Renesas UPA2716AGR-E1-AT to view detailed technical specifications.
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