P-channel MOSFET with a 30V drain-source breakdown voltage and a maximum continuous drain current of 13A. Features a low drain-source on-resistance of 18.2mR and a maximum power dissipation of 2W. This surface-mount component utilizes METAL-OXIDE SEMICONDUCTOR FET technology and is designed for switching applications. It offers an avalanche energy rating of 16.9mJ and a pulsed drain current of 130A, with a maximum operating temperature of 150°C. The device is RoHS compliant and packaged in a rectangular, small outline plastic package with gull-wing terminals.
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Technical Specifications
Renesas UPA2718AGR-E1-AT technical specifications.
General
| Avalanche Energy Rating (Eas) | 16.9mJ |
| Drain Current-Max (Abs) (ID) | 13A |
| Drain Current-Max (ID) | 13A |
| Drain-source On Resistance-Max | 18.2mR |
| DS Breakdown Voltage-Min | 30V |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| JESD-30 Code | R-PDSO-G8 |
| JESD-609 Code | e3 |
| Max Operating Temperature | 150°C |
| Number of Elements | 1 |
| Package Body Material | Plastic |
| Package Shape | Rectangular |
| Package Style | SMALL OUTLINEMeter |
| Polarity/Channel Type | P-CHANNEL |
| Power Dissipation-Max (Abs) | 2W |
| Pulsed Drain Current-Max (IDM) | 130A |
| Qualification Status | Not Qualified |
| RoHS Compliant | Yes |
| Surface Mount | Yes |
| Terminal Finish | Tin |
| Terminal Form | Gull Wing |
| Terminal Position | DUAL |
| Transistor Application | SWITCHING |
| Transistor Element Material | SILICON |
Compliance
| RoHS | Compliant |
Datasheet
Renesas UPA2718AGR-E1-AT Datasheet
Download the complete datasheet for Renesas UPA2718AGR-E1-AT to view detailed technical specifications.
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