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Technical Specifications
Renesas UPA2719AGR-E1-AT technical specifications.
General
Avalanche Energy Rating (Eas)
10mJ
Drain Current-Max (Abs) (ID)
10A
Drain Current-Max (ID)
10A
Drain-source On Resistance-Max
25.5mR
DS Breakdown Voltage-Min
30V
FET Technology
METAL-OXIDE SEMICONDUCTOR
JESD-30 Code
R-PDSO-G8
Max Operating Temperature
150°C
Number of Elements
1
Package Body Material
Plastic
Package Shape
Rectangular
Package Style
SMALL OUTLINEMeter
Polarity/Channel Type
P-CHANNEL
Power Dissipation-Max (Abs)
2W
Pulsed Drain Current-Max (IDM)
100A
Qualification Status
Not Qualified
RoHS Compliant
Yes
Surface Mount
Yes
Terminal Form
Gull Wing
Terminal Position
DUAL
Transistor Application
SWITCHING
Transistor Element Material
SILICON
Compliance
RoHS
Compliant
Datasheet
Renesas UPA2719AGR-E1-AT Datasheet
Download the complete datasheet for Renesas UPA2719AGR-E1-AT to view detailed technical specifications.
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