The UPA2719GR-E2-A is a single N-channel metal-oxide semiconductor field-effect transistor (MOSFET) with a maximum operating temperature of 150°C. It features a drain-source on resistance of 25.5 milliohms and a maximum power dissipation of 2 watts. The device is packaged in a small outline R-PDSO-G8 package and is RoHS compliant. It is suitable for switching applications and has a pulsed drain current of 100 amps.
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Technical Specifications
Renesas UPA2719GR-E2-A technical specifications.
General
| Avalanche Energy Rating (Eas) | 10mJ |
| Drain Current-Max (Abs) (ID) | 10A |
| Drain Current-Max (ID) | 10A |
| Drain-source On Resistance-Max | 25.5mR |
| DS Breakdown Voltage-Min | 30V |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| JESD-30 Code | R-PDSO-G8 |
| JESD-609 Code | e6 |
| Max Operating Temperature | 150°C |
| Number of Elements | 1 |
| Package Body Material | Plastic |
| Package Shape | Rectangular |
| Package Style | SMALL OUTLINEMeter |
| Polarity/Channel Type | N-CHANNEL |
| Power Dissipation-Max (Abs) | 2W |
| Pulsed Drain Current-Max (IDM) | 100A |
| RoHS Compliant | Yes |
| Surface Mount | Yes |
| Terminal Finish | Tin |
| Terminal Form | Gull Wing |
| Terminal Position | DUAL |
| Transistor Application | SWITCHING |
| Transistor Element Material | SILICON |
Compliance
| RoHS | Compliant |
Datasheet
Renesas UPA2719GR-E2-A Datasheet
Download the complete datasheet for Renesas UPA2719GR-E2-A to view detailed technical specifications.
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