P-channel MOSFET transistor for switching applications. Features a 30V drain-source breakdown voltage and a maximum continuous drain current of 44A, with a pulsed drain current capability of 180A. Offers a low on-resistance of 6.4mR and a maximum power dissipation of 4.6W. Operates up to 150°C with a 48mJ avalanche energy rating. Packaged in an 8-pin HVSON with tin terminal finish.
Renesas UPA2731T1A-E1-AZ technical specifications.
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