P-channel MOSFET transistor for switching applications. Features a 30V drain-source breakdown voltage and a maximum continuous drain current of 44A, with a pulsed drain current capability of 180A. Offers a low on-resistance of 6.4mR and a maximum power dissipation of 4.6W. Operates up to 150°C with a 48mJ avalanche energy rating. Packaged in an 8-pin HVSON with tin terminal finish.
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Technical Specifications
Renesas UPA2731T1A-E1-AZ technical specifications.
General
Avalanche Energy Rating (Eas)
48mJ
Case Connection
DRAIN
Drain Current-Max (Abs) (ID)
44A
Drain Current-Max (ID)
44A
Drain-source On Resistance-Max
6.4mR
DS Breakdown Voltage-Min
30V
FET Technology
METAL-OXIDE SEMICONDUCTOR
JESD-609 Code
e6
Max Operating Temperature
150°C
Number of Elements
1
Package Body Material
Plastic
Package Shape
Rectangular
Package Style
SMALL OUTLINEMeter
Polarity/Channel Type
P-CHANNEL
Power Dissipation-Max (Abs)
4.6W
Pulsed Drain Current-Max (IDM)
180A
Qualification Status
Not Qualified
Reach SVHC Compliant
Yes
RoHS Compliant
Yes
Surface Mount
Yes
Terminal Finish
Tin
Terminal Form
Flat
Terminal Position
DUAL
Transistor Application
SWITCHING
Transistor Element Material
SILICON
Compliance
RoHS
Compliant
Datasheet
Renesas UPA2731T1A-E1-AZ Datasheet
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