P-channel MOSFET, 30V drain-source breakdown voltage, 85A continuous drain current, and 180A pulsed drain current. Features a low 2.8mΩ maximum drain-source on-resistance and 83W maximum power dissipation. This surface-mount component utilizes METAL-OXIDE SEMICONDUCTOR FET technology, housed in an 8-SON rectangular plastic package with tin terminal finish. Rated for 150°C maximum operating temperature and includes an avalanche energy rating of 160mJ.
Quick Jump:
Technical Specifications
Renesas UPA2739T1A-E2-AY technical specifications.
General
Avalanche Energy Rating (Eas)
160mJ
Case Connection
DRAIN
Drain Current-Max (Abs) (ID)
85A
Drain Current-Max (ID)
85A
Drain-source On Resistance-Max
2.8mR
DS Breakdown Voltage-Min
30V
FET Technology
METAL-OXIDE SEMICONDUCTOR
JESD-30 Code
R-PDSO-N8
JESD-609 Code
e3
Max Operating Temperature
150°C
Number of Elements
1
Package Body Material
Plastic
Package Shape
Rectangular
Package Style
SMALL OUTLINEMeter
Polarity/Channel Type
P-CHANNEL
Power Dissipation-Max (Abs)
83W
Pulsed Drain Current-Max (IDM)
180A
Reach SVHC Compliant
Yes
RoHS Compliant
Yes
Surface Mount
Yes
Terminal Finish
Tin
Terminal Form
No Lead
Terminal Position
DUAL
Transistor Application
SWITCHING
Transistor Element Material
SILICON
Compliance
RoHS
Compliant
Datasheet
Renesas UPA2739T1A-E2-AY Datasheet
Download the complete datasheet for Renesas UPA2739T1A-E2-AY to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.