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Technical Specifications
Renesas UPA2800T1L-E1-AY technical specifications.
General
Avalanche Energy Rating (Eas)
28.9mJ
Case Connection
DRAIN
Drain Current-Max (Abs) (ID)
17A
Drain Current-Max (ID)
17A
Drain-source On Resistance-Max
7.3mR
DS Breakdown Voltage-Min
30V
FET Technology
METAL-OXIDE SEMICONDUCTOR
Max Operating Temperature
150°C
Number of Elements
1
Package Body Material
Plastic
Package Shape
Rectangular
Package Style
SMALL OUTLINEMeter
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (Abs)
3.8W
Pulsed Drain Current-Max (IDM)
102A
Qualification Status
Not Qualified
RoHS Compliant
Yes
Surface Mount
Yes
Terminal Form
Flat
Terminal Position
DUAL
Transistor Application
SWITCHING
Transistor Element Material
SILICON
Compliance
RoHS
Compliant
Datasheet
Renesas UPA2800T1L-E1-AY Datasheet
Download the complete datasheet for Renesas UPA2800T1L-E1-AY to view detailed technical specifications.
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