The UPA2801T1L-E1-AY is a single N-channel metal-oxide semiconductor field-effect transistor with a maximum operating temperature of 150°C. It has a maximum drain current of 16A and a maximum drain-source on resistance of 9.6mΩ. The device is rated for a maximum power dissipation of 3.8W and has a pulsed drain current of 96A. The transistor is packaged in a rectangular plastic case with a flat terminal form and dual terminal position. It is RoHS compliant and suitable for switching applications.
Quick Jump:
Technical Specifications
Renesas UPA2801T1L-E1-AY technical specifications.
General
| Avalanche Energy Rating (Eas) | 25.6mJ |
| Case Connection | DRAIN |
| Drain Current-Max (Abs) (ID) | 16A |
| Drain Current-Max (ID) | 16A |
| Drain-source On Resistance-Max | 9.6mR |
| DS Breakdown Voltage-Min | 30V |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| Max Operating Temperature | 150°C |
| Number of Elements | 1 |
| Package Body Material | Plastic |
| Package Shape | Rectangular |
| Package Style | SMALL OUTLINEMeter |
| Polarity/Channel Type | N-CHANNEL |
| Power Dissipation-Max (Abs) | 3.8W |
| Pulsed Drain Current-Max (IDM) | 96A |
| Qualification Status | Not Qualified |
| RoHS Compliant | Yes |
| Surface Mount | Yes |
| Terminal Form | Flat |
| Terminal Position | DUAL |
| Transistor Application | SWITCHING |
| Transistor Element Material | SILICON |
Compliance
| RoHS | Compliant |
Datasheet
Renesas UPA2801T1L-E1-AY Datasheet
Download the complete datasheet for Renesas UPA2801T1L-E1-AY to view detailed technical specifications.
No datasheet is available for this part.