P-channel MOSFET for switching applications, featuring a 30V drain-source breakdown voltage and a maximum continuous drain current of 13A. This surface-mount component offers a low 12mΩ maximum drain-source on-resistance and a high pulsed drain current capability of 78A. With a maximum power dissipation of 3.8W and an avalanche energy rating of 16.9mJ, it operates up to 150°C. Constructed with silicon and housed in a small outline rectangular plastic package with tin terminals.
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Technical Specifications
Renesas UPA2810T1L-E2-AY technical specifications.
General
| Avalanche Energy Rating (Eas) | 16.9mJ |
| Case Connection | DRAIN |
| Drain Current-Max (Abs) (ID) | 13A |
| Drain Current-Max (ID) | 13A |
| Drain-source On Resistance-Max | 12mR |
| DS Breakdown Voltage-Min | 30V |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| JESD-609 Code | e3 |
| Max Operating Temperature | 150°C |
| Number of Elements | 1 |
| Package Body Material | Plastic |
| Package Shape | Rectangular |
| Package Style | SMALL OUTLINEMeter |
| Polarity/Channel Type | P-CHANNEL |
| Power Dissipation-Max (Abs) | 3.8W |
| Pulsed Drain Current-Max (IDM) | 78A |
| Qualification Status | Not Qualified |
| RoHS Compliant | Yes |
| Surface Mount | Yes |
| Terminal Finish | Tin |
| Terminal Form | Flat |
| Terminal Position | DUAL |
| Transistor Application | SWITCHING |
| Transistor Element Material | SILICON |
Compliance
| RoHS | Compliant |
Datasheet
Renesas UPA2810T1L-E2-AY Datasheet
Download the complete datasheet for Renesas UPA2810T1L-E2-AY to view detailed technical specifications.
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