N-channel enhancement mode power MOSFET in an 8-pin HVSON package, featuring a 30V drain-source voltage and 26A continuous drain current. This surface-mount component offers a low 3.8mOhm drain-source on-resistance at 10V gate-source voltage. Key specifications include a typical gate charge of 51nC at 10V and an input capacitance of 2490pF at 10V drain-source voltage. The compact plastic package measures 3.3mm x 3mm x 0.9mm with a 0.65mm pin pitch, suitable for high-density PCB layouts. Operating temperature range spans from -55°C to 150°C, with a maximum power dissipation of 1500mW.
PackageHVSON
MountingSurface Mount
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Technical Specifications
Renesas uPA2821T1L-E2-AT technical specifications.
General
Package Family Name
SON
Package/Case
HVSON
Pin Count
8
PCB
8
Package Length (mm)
3.3
Package Width (mm)
3
Package Height (mm)
0.9
Seated Plane Height (mm)
0.9
Pin Pitch (mm)
0.65
Package Material
Plastic
Mounting
Surface Mount
Configuration
Single Quad Drain Triple Source
Category
Power MOSFET
Channel Mode
Enhancement
Channel Type
N
Number of Elements per Chip
1
Maximum Drain Source Voltage
30V
Maximum Gate Source Voltage
±20V
Maximum Continuous Drain Current
26A
Maximum Drain Source Resistance
3.8@10VmOhm
Typical Gate Charge @ Vgs
51@10V|32@5VnC
Typical Gate Charge @ 10V
51nC
Typical Input Capacitance @ Vds
2490@10VpF
Maximum Power Dissipation
1500mW
Min Operating Temperature
-55°C
Max Operating Temperature
150°C
Compliance
Cage Code
SAN34
EU RoHS
Yes
HTS Code
8541290095
Schedule B
8541290080
ECCN
EAR99
Automotive
No
AEC Qualified
No
PPAP
No
RoHS Versions
2011/65/EU, 2015/863
Datasheet
Renesas uPA2821T1L-E2-AT Datasheet
Download the complete datasheet for Renesas uPA2821T1L-E2-AT to view detailed technical specifications.
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