N-channel enhancement mode power MOSFET in an 8-pin HVSON package. Features a 30V drain-source voltage rating and a 34A continuous drain current capability. Offers low on-resistance of 2.6 mOhm at 10V Vgs, with typical gate charge of 83 nC at 10V. Surface mountable with a compact 3.3mm x 3mm footprint.
PackageHVSON
MountingSurface Mount
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Technical Specifications
Renesas uPA2822T1L-E1-AT technical specifications.
General
| Package Family Name | SON |
| Package/Case | HVSON |
| Pin Count | 8 |
| PCB | 8 |
| Package Length (mm) | 3.3 |
| Package Width (mm) | 3 |
| Package Height (mm) | 0.9 |
| Seated Plane Height (mm) | 0.9 |
| Pin Pitch (mm) | 0.65 |
| Package Material | Plastic |
| Mounting | Surface Mount |
| Configuration | Single Quad Drain Triple Source |
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 30V |
| Maximum Gate Source Voltage | ±20V |
| Maximum Continuous Drain Current | 34A |
| Maximum Drain Source Resistance | 2.6@10VmOhm |
| Typical Gate Charge @ Vgs | 83@10V|51@5VnC |
| Typical Gate Charge @ 10V | 83nC |
| Typical Input Capacitance @ Vds | 4660@10VpF |
| Maximum Power Dissipation | 1500mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
Compliance
| Cage Code | SAN34 |
| EU RoHS | Yes |
| HTS Code | 8541290095 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| RoHS Versions | 2011/65/EU |
Datasheet
Renesas uPA2822T1L-E1-AT Datasheet
Download the complete datasheet for Renesas uPA2822T1L-E1-AT to view detailed technical specifications.
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