N-channel Power MOSFET, single quad drain triple source configuration, featuring a 30V maximum drain-source voltage and 34A maximum continuous drain current. This surface-mount component is housed in an 8-pin HVSON package with dimensions of 3.3mm x 3mm x 0.9mm and a 0.65mm pin pitch. It offers a low maximum drain-source on-resistance of 2.6 mOhm at 10V, with typical gate charge values of 83nC at 10V and 51nC at 5V. Operating across a temperature range of -55°C to 150°C, it has a maximum power dissipation of 1500mW.
PackageHVSON
MountingSurface Mount
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Technical Specifications
Renesas uPA2822T1L-E2-AT technical specifications.
General
Package Family Name
SON
Package/Case
HVSON
Pin Count
8
PCB
8
Package Length (mm)
3.3
Package Width (mm)
3
Package Height (mm)
0.9
Seated Plane Height (mm)
0.9
Pin Pitch (mm)
0.65
Package Material
Plastic
Mounting
Surface Mount
Configuration
Single Quad Drain Triple Source
Category
Power MOSFET
Channel Mode
Enhancement
Channel Type
N
Number of Elements per Chip
1
Maximum Drain Source Voltage
30V
Maximum Gate Source Voltage
±20V
Maximum Continuous Drain Current
34A
Maximum Drain Source Resistance
2.6@10VmOhm
Typical Gate Charge @ Vgs
83@10V|51@5VnC
Typical Gate Charge @ 10V
83nC
Typical Input Capacitance @ Vds
4660@10VpF
Maximum Power Dissipation
1500mW
Min Operating Temperature
-55°C
Max Operating Temperature
150°C
Compliance
Cage Code
SAN34
EU RoHS
Yes
HTS Code
8541290095
Schedule B
8541290080
ECCN
EAR99
Automotive
No
AEC Qualified
No
PPAP
No
RoHS Versions
2011/65/EU, 2015/863
Datasheet
Renesas uPA2822T1L-E2-AT Datasheet
Download the complete datasheet for Renesas uPA2822T1L-E2-AT to view detailed technical specifications.
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