Renesas
UPA622TT-E1-A
N-Channel Metal-Oxide Semiconductor FET, 30V, 3A, 82mR, 1.3W, 150°C, Plastic, Small Outline
This N-channel metal-oxide semiconductor FET features a maximum operating temperature of 150°C and a maximum drain current of 3A. The device has a minimum breakdown voltage of 30V and a maximum drain-source on resistance of 82mΩ. It is packaged in a plastic small outline package and is RoHS compliant.
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Technical Specifications
Renesas UPA622TT-E1-A technical specifications.
General
| Drain Current-Max (Abs) (ID) | 3A |
| Drain Current-Max (ID) | 3A |
| Drain-source On Resistance-Max | 82mR |
| DS Breakdown Voltage-Min | 30V |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| JESD-30 Code | R-PDSO-F6 |
| JESD-609 Code | e6 |
| Max Operating Temperature | 150°C |
| Number of Elements | 1 |
| Package Body Material | Plastic |
| Package Shape | Rectangular |
| Package Style | SMALL OUTLINEMeter |
| Polarity/Channel Type | N-CHANNEL |
| Power Dissipation-Max (Abs) | 1.3W |
| Qualification Status | Not Qualified |
| RoHS Compliant | Yes |
| Surface Mount | Yes |
| Terminal Finish | Tin |
| Terminal Form | Flat |
| Terminal Position | DUAL |
| Transistor Application | SWITCHING |
| Transistor Element Material | SILICON |
Compliance
| RoHS | Compliant |
Datasheet
Renesas UPA622TT-E1-A Datasheet
Download the complete datasheet for Renesas UPA622TT-E1-A to view detailed technical specifications.
No datasheet is available for this part.