1Mbit SRAM memory, organized as 128K x 8, features a maximum access time of 70ns. This CMOS component operates with a 5V supply voltage and a maximum supply current of 70mA. It offers common I/O and 3-state output characteristics, with a terminal pitch of 2.54mm. The device is housed in a 32-pin PDIP package, designed for through-hole mounting.
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Technical Specifications
Renesas UPD431000ACZ-70LL technical specifications.
General
Access Time-Max
70ns
Density
1048576b
I/O Type
COMMON
JESD-30 Code
R-PDIP-T32
Max Operating Temperature
70°C
Min Operating Temperature
0°C
Max Supply Current
70mA
Memory Type
SRAM,
Memory Width
8
Number of Words
131072
Number of Words Code
128K
Organization
128KX8
Output Characteristics
3-STATE
Package Body Material
Plastic
Package Code
DIP
Package Equivalence Code
DIP32,.6
Package Shape
Rectangular
Package Style
IN-LINEMeter
Parallel/Serial
PARALLEL
Power Supplies
5V
Qualification Status
Not Qualified
RoHS Compliant
No
Standby Current-Max
10uA
Standby Voltage-Min
2V
Supply Voltage-Nom (Vsup)
5V
Surface Mount
No
Technology
CMOS
Temperature Grade
COMMERCIAL
Terminal Form
Through Hole
Terminal Pitch
2.54mm
Terminal Position
DUAL
Compliance
RoHS
Not Compliant
Datasheet
Renesas UPD431000ACZ-70LL Datasheet
Download the complete datasheet for Renesas UPD431000ACZ-70LL to view detailed technical specifications.
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