High-speed QDR SRAM with 188,743,680 bits density, organized as 1M words x 18 bits. Features a maximum access time of 0.45ns and operates from a 1.7V to 1.9V supply voltage. This parallel memory component utilizes CMOS technology and is housed in a low-profile, rectangular LBGA package with a 1mm terminal pitch. Suitable for commercial temperature grades, with a maximum operating temperature of 70°C.
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Technical Specifications
Renesas UPD44165182BF5-E40-EQ3 technical specifications.
General
Access Time-Max
0.45ns
Density
18874368b
Height - Seated (Max)
1.46mm
JESD-30 Code
R-PBGA-B165
JESD-609 Code
e0
Length
15mm
Max Operating Temperature
70°C
Memory Type
QDR SRAM
Memory Width
18
Min Operating Temperature
0°C
Number of Functions
1
Number of Words
1048576
Number of Words Code
1M
Organization
1MX18
Package Body Material
Plastic
Package Code
LBGA
Package Shape
Rectangular
Package Style
GRID ARRAY, LOW PROFILEMeter
Parallel/Serial
PARALLEL
Reach SVHC Compliant
Yes
RoHS Compliant
No
Supply Voltage-Max (Vsup)
1.9V
Supply Voltage-Min (Vsup)
1.7V
Supply Voltage-Nom (Vsup)
1.8V
Surface Mount
Yes
Technology
CMOS
Temperature Grade
COMMERCIAL
Terminal Finish
Tin
Terminal Form
Ball
Terminal Pitch
1mm
Terminal Position
BOTTOM
Width
13mm
Compliance
RoHS
Not Compliant
Datasheet
Renesas UPD44165182BF5-E40-EQ3 Datasheet
Download the complete datasheet for Renesas UPD44165182BF5-E40-EQ3 to view detailed technical specifications.
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