High-performance QDR SRAM with 18,874,368 bits density, organized as 512K x 36. Features a maximum access time of 0.45ns and operates from a 1.7V to 1.9V supply voltage. This parallel SRAM is surface mountable, utilizing a low-profile rectangular LBGA package with a 1mm terminal pitch. Designed for commercial temperature ranges (0°C to 70°C), it offers a 1.46mm seated height.
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Technical Specifications
Renesas UPD44165364BF5-E40-EQ3 technical specifications.
General
Access Time-Max
0.45ns
Density
18874368b
Height - Seated (Max)
1.46mm
JESD-30 Code
R-PBGA-B165
Length
15mm
Max Operating Temperature
70°C
Memory Type
QDR SRAM
Memory Width
36
Min Operating Temperature
0°C
Number of Functions
1
Number of Words
524288
Number of Words Code
512K
Organization
512KX36
Package Body Material
Plastic
Package Code
LBGA
Package Shape
Rectangular
Package Style
GRID ARRAY, LOW PROFILEMeter
Parallel/Serial
PARALLEL
RoHS Compliant
No
Supply Voltage-Max (Vsup)
1.9V
Supply Voltage-Min (Vsup)
1.7V
Supply Voltage-Nom (Vsup)
1.8V
Surface Mount
Yes
Technology
CMOS
Temperature Grade
COMMERCIAL
Terminal Form
Ball
Terminal Pitch
1mm
Terminal Position
BOTTOM
Width
13mm
Compliance
RoHS
Not Compliant
Datasheet
Renesas UPD44165364BF5-E40-EQ3 Datasheet
Download the complete datasheet for Renesas UPD44165364BF5-E40-EQ3 to view detailed technical specifications.
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