36-bit DDR SRAM with 1M words, offering a maximum clock frequency of 250MHz and a fast 0.45ns access time. This parallel memory component features a pipelined architecture and separate I/O, utilizing CMOS technology. Packaged in a 165-ball plastic BGA with dimensions of 15 x 17mm and a low profile of 1.46mm, it operates from a 1.7V to 1.9V supply. Ideal for commercial temperature ranges (0°C to 70°C), this surface-mount device supports 1.5/1.8V and 1.8V power supplies.
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Technical Specifications
Renesas UPD44324365BF5-E40-FQ1 technical specifications.
General
Access Time-Max
0.45ns
Additional Feature
PIPELINED ARCHITECTURE
Clock Frequency-Max (fCLK)
250MHz
Density
37748736b
Height - Seated (Max)
1.46mm
I/O Type
SEPARATE
JESD-30 Code
R-PBGA-B165
Length
17mm
Max Operating Temperature
70°C
Memory Type
DDR SRAM
Memory Width
36
Min Operating Temperature
0°C
Max Supply Current
540mA
Number of Functions
1
Number of Words
1048576
Number of Words Code
1M
Organization
1MX36
Output Characteristics
3-STATE
Package Body Material
Plastic
Package Code
LBGA
Package Equivalence Code
BGA165,11X15,40
Package Shape
Rectangular
Package Style
GRID ARRAY, LOW PROFILEMeter
Parallel/Serial
PARALLEL
Power Supplies
1.5/1.8,1.8V
Qualification Status
Not Qualified
RoHS Compliant
No
Standby Current-Max
390mA
Standby Voltage-Min
1.7V
Supply Voltage-Max (Vsup)
1.9V
Supply Voltage-Min (Vsup)
1.7V
Supply Voltage-Nom (Vsup)
1.8V
Surface Mount
Yes
Technology
CMOS
Temperature Grade
COMMERCIAL
Terminal Form
Ball
Terminal Pitch
1mm
Terminal Position
BOTTOM
Width
15mm
Compliance
RoHS
Not Compliant
Datasheet
Renesas UPD44324365BF5-E40-FQ1 Datasheet
Download the complete datasheet for Renesas UPD44324365BF5-E40-FQ1 to view detailed technical specifications.
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