DDR SRAM chip with 1M x 36 organization, offering 36M-bit density. Features a pipelined architecture and a maximum clock frequency of 250MHz, with a fast access time of 0.45ns. Operates with a 1.8V supply voltage and supports 1.5/1.8V power supplies. This surface-mount component utilizes CMOS technology and comes in a 165-pin BGA package. RoHS compliant and designed for commercial temperature grades.
Quick Jump:
Technical Specifications
Renesas UPD44324365BF5-E40-FQ1-A technical specifications.
General
Access Time-Max
0.45ns
Additional Feature
PIPELINED ARCHITECTURE
Clock Frequency-Max (fCLK)
250MHz
Density
37748736b
Height - Seated (Max)
1.46mm
I/O Type
SEPARATE
JESD-30 Code
R-PBGA-B165
Length
17mm
Max Operating Temperature
70°C
Memory Type
DDR SRAM
Memory Width
36
Min Operating Temperature
0°C
Max Supply Current
540mA
Number of Functions
1
Number of Words
1048576
Number of Words Code
1M
Organization
1MX36
Output Characteristics
3-STATE
Package Body Material
Plastic
Package Code
LBGA
Package Equivalence Code
BGA165,11X15,40
Package Shape
Rectangular
Package Style
GRID ARRAY, LOW PROFILEMeter
Parallel/Serial
PARALLEL
Power Supplies
1.5/1.8,1.8V
Qualification Status
Not Qualified
RoHS Compliant
Yes
Standby Current-Max
390mA
Standby Voltage-Min
1.7V
Supply Voltage-Max (Vsup)
1.9V
Supply Voltage-Min (Vsup)
1.7V
Supply Voltage-Nom (Vsup)
1.8V
Surface Mount
Yes
Technology
CMOS
Temperature Grade
COMMERCIAL
Terminal Form
Ball
Terminal Pitch
1mm
Terminal Position
BOTTOM
Width
15mm
Compliance
RoHS
Compliant
Datasheet
Renesas UPD44324365BF5-E40-FQ1-A Datasheet
Download the complete datasheet for Renesas UPD44324365BF5-E40-FQ1-A to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.