2M x 18 QDR SRAM, 36M-bit density, featuring a maximum access time of 0.45ns and a maximum clock frequency of 250MHz. This parallel interface memory utilizes separate I/O and 3-state output characteristics. Operating from a 1.8V nominal supply voltage, it is housed in a 165-pin BGA package with a 1mm terminal pitch. RoHS compliant and designed for surface mounting, this CMOS technology component operates within a commercial temperature range of 0°C to 70°C.
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Technical Specifications
Renesas UPD44325184BF5-E40-FQ1-A technical specifications.
General
Access Time-Max
0.45ns
Clock Frequency-Max (fCLK)
250MHz
Density
37748736b
Height - Seated (Max)
1.46mm
I/O Type
SEPARATE
JESD-30 Code
R-PBGA-B165
Length
17mm
Max Operating Temperature
70°C
Memory Type
QDR SRAM
Memory Width
18
Min Operating Temperature
0°C
Max Supply Current
520mA
Number of Functions
1
Number of Words
2097152
Number of Words Code
2M
Organization
2MX18
Output Characteristics
3-STATE
Package Body Material
Plastic
Package Code
LBGA
Package Equivalence Code
BGA165,11X15,40
Package Shape
Rectangular
Package Style
GRID ARRAY, LOW PROFILEMeter
Parallel/Serial
PARALLEL
Power Supplies
1.5/1.8,1.8V
Qualification Status
Not Qualified
RoHS Compliant
Yes
Standby Current-Max
380mA
Standby Voltage-Min
1.7V
Supply Voltage-Max (Vsup)
1.9V
Supply Voltage-Min (Vsup)
1.7V
Supply Voltage-Nom (Vsup)
1.8V
Surface Mount
Yes
Technology
CMOS
Temperature Grade
COMMERCIAL
Terminal Form
Ball
Terminal Pitch
1mm
Terminal Position
BOTTOM
Width
15mm
Compliance
RoHS
Compliant
Datasheet
Renesas UPD44325184BF5-E40-FQ1-A Datasheet
Download the complete datasheet for Renesas UPD44325184BF5-E40-FQ1-A to view detailed technical specifications.
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