Synchronous SRAM, QDR, 4Mx18 organization, CMOS technology, BGA package. Features 4194304 words of memory with a maximum clock frequency of 400MHz and a maximum access time of 0.45ns. Operates with 1.5V/1.8V or 1.8V power supplies, offering separate I/O and 3-state output characteristics. Commercial temperature grade, RoHS compliant, with a 165-pin plastic BGA package.
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Technical Specifications
Renesas UPD44647186AF5-E25-FQ1-A technical specifications.
General
Access Time-Max
0.45ns
Clock Frequency-Max (fCLK)
400MHz
Density
75497472b
I/O Type
SEPARATE
JESD-30 Code
R-PBGA-B165
Max Operating Temperature
70°C
Min Operating Temperature
0°C
Max Supply Current
740mA
Memory Type
SRAM,
Memory Width
18
Number of Words
4194304
Number of Words Code
4M
Organization
4MX18
Output Characteristics
3-STATE
Package Body Material
Plastic
Package Code
BGA
Package Equivalence Code
BGA165,11X15,40
Package Shape
Rectangular
Package Style
GRID ARRAYMeter
Parallel/Serial
PARALLEL
Power Supplies
1.5/1.8,1.8V
Qualification Status
Not Qualified
RoHS Compliant
Yes
Standby Current-Max
430mA
Standby Voltage-Min
1.7V
Surface Mount
Yes
Technology
CMOS
Temperature Grade
COMMERCIAL
Terminal Form
Ball
Terminal Pitch
1mm
Terminal Position
BOTTOM
Compliance
RoHS
Compliant
Datasheet
Renesas UPD44647186AF5-E25-FQ1-A Datasheet
Download the complete datasheet for Renesas UPD44647186AF5-E25-FQ1-A to view detailed technical specifications.
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