RF Micro Devices
FPD1500DFN
RF Power Field-Effect Transistor, 1-Element, L Band, Gallium Arsenide, N-Channel, High Electron Mobility FET, 2 X 2 MM, ROHS COMPLIANT, DFN-6
Quick Jump:
Technical Specifications
RF Micro Devices FPD1500DFN technical specifications.
General
| Max Operating Temperature | 175 |
| Number of Terminals | 6 |
| Terminal Position | DUAL |
| Pin Count | 6 |
| Number of Elements | 1 |
Compliance
| Eccn Code | EAR99 |
| REACH | unknown |
| Military Spec | False |
Datasheet
RF Micro Devices FPD1500DFN Datasheet
Download the complete datasheet for RF Micro Devices FPD1500DFN to view detailed technical specifications.
No datasheet is available for this part.