RF Power Field-Effect Transistor, 1-Element, L Band, Gallium Arsenide, N-Channel, High Electron Mobility FET, 2 X 2 MM, ROHS COMPLIANT, DFN-6
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| Max Operating Temperature | 175 |
| Number of Terminals | 6 |
| Terminal Position | DUAL |
| Pin Count | 6 |
| Number of Elements | 1 |
| Eccn Code | EAR99 |
| REACH | unknown |
| Military Spec | False |
