RF Micro Devices
FPD750SOT343CE
RF Power Field-Effect Transistor, 1-Element, S Band, Gallium Arsenide, N-Channel, High Electron Mobility FET, ROHS COMPLIANT, PLASTIC PACKAGE-4
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Technical Specifications
RF Micro Devices FPD750SOT343CE technical specifications.
General
Max Operating Temperature
175
Number of Terminals
4
Terminal Position
DUAL
Pin Count
4
Number of Elements
1
Compliance
RoHS
Yes
Eccn Code
EAR99
Lead Free
Yes
HTS Code
8541.29.00.75
REACH
Compliant
Military Spec
False
Datasheet
RF Micro Devices FPD750SOT343CE Datasheet
Download the complete datasheet for RF Micro Devices FPD750SOT343CE to view detailed technical specifications.
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