The BC847BTT1G is a NPN bipolar junction transistor with a collector-emitter breakdown voltage of 45V and a current rating of 100mA. It features a power dissipation of 300mW and is packaged in a SC case. The device is lead-free and halogen-free, and compliant with Reach SVHC regulations. It is available in bulk packaging.
PackageSC
Current Rating100mA
PolarityNPN
Power300mW
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Technical Specifications
Rochester Electronics BC847BTT1G technical specifications.
General
| Package/Case | SC |
| Collector Emitter Breakdown Voltage | 45V |
| Current Rating | 100mA |
| Halogen Free | Halogen Free |
| Lead Free | Lead Free |
| Packaging | Bulk |
| Polarity | NPN |
| Power Dissipation | 300mW |
| Reach SVHC Compliant | Yes |
| DC Rated Voltage | 45V |
Compliance
| RoHS | Compliant |
Datasheet
Rochester Electronics BC847BTT1G Datasheet
Download the complete datasheet for Rochester Electronics BC847BTT1G to view detailed technical specifications.
No datasheet is available for this part.