Rochester Electronics
CY7C1414BV18-200BZXI
165-Pin Industrial QDR SRAM, 1.7-1.9V, 1048576 Words, 0.45ns Access Time, FBGA-165
The CY7C1414BV18-200BZXI is a 165-pin industrial QDR SRAM memory IC with a nominal supply voltage of 1.8V and a maximum supply voltage of 1.9V. It has a maximum access time of 0.45ns and a memory capacity of 1048576 words. The device is packaged in a lead-free FBGA-165 package with dimensions of 15 x 17 mm and a height of 1.40 mm. It operates over a temperature range of -40 to 85°C.
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Technical Specifications
Rochester Electronics CY7C1414BV18-200BZXI technical specifications.
General
| Max Operating Temperature | 85 |
| Number of Terminals | 165 |
| Min Operating Temperature | -40 |
| Terminal Position | BOTTOM |
| JEDEC Package Code | R-PBGA-B165 |
| Width | 15 |
| Length | 17 |
| Pin Count | 165 |
| Number of Functions | 1 |
| Temperature Grade | INDUSTRIAL |
| Supply Voltage-Nom (Vsup) | 1.8 |
| Supply Voltage-Max (Vsup) | 1.9 |
| Supply Voltage-Min (Vsup) | 1.7 |
| Number of Words | 1048576 |
| Number of Words Code | 1000000 |
| Memory IC Type | QDR SRAM |
| Parallel/Serial | PARALLEL |
| Access Time-Max | 0.45 |
Compliance
| RoHS | Yes |
| Lead Free | Yes |
| REACH | unknown |
| Military Spec | False |
Datasheet
Rochester Electronics CY7C1414BV18-200BZXI Datasheet
Download the complete datasheet for Rochester Electronics CY7C1414BV18-200BZXI to view detailed technical specifications.
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