The FDC6302P is a junction field-effect transistor with a continuous drain current of -120mA and a drain to source breakdown voltage of -25V. It features a low drain to source resistance of 10.6 ohms and a power dissipation of 900 milliwatts. The device is packaged in a lead-free SOT-363 package and is suitable for use in a variety of applications. The operating temperature range is not specified, but the device is suitable for use in a lead-free environment.
PackageSOT-363
Current Rating-120mA
Power900mW
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Technical Specifications
Rochester Electronics FDC6302P technical specifications.
General
| Package/Case | SOT-363 |
| Continuous Drain Current (ID) | -120mA |
| Current Rating | -120mA |
| Drain to Source Breakdown Voltage | -25V |
| Drain to Source Resistance | 10.6R |
| Drain to Source Voltage (Vdss) | -25V |
| Input Capacitance | 11pF |
| Lead Free | Lead Free |
| Packaging | Bulk |
| Power Dissipation | 900mW |
| DC Rated Voltage | -25V |
Compliance
| RoHS | Not Compliant |
Datasheet
Rochester Electronics FDC6302P Datasheet
Download the complete datasheet for Rochester Electronics FDC6302P to view detailed technical specifications.
No datasheet is available for this part.