The FDC6305N is a 20V N-Channel MOSFET with a continuous drain current of 2.7A and a power dissipation of 960mW. It features a drain to source breakdown voltage of 20V and a gate to source voltage of 8V. The device is lead free and compliant with Reach SVHC regulations. It is packaged in bulk form.
Current Rating2.7A
Power960mW
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Technical Specifications
Rochester Electronics FDC6305N technical specifications.
General
| Continuous Drain Current (ID) | 2.7A |
| Current Rating | 2.7A |
| Drain to Source Breakdown Voltage | 20V |
| Drain to Source Resistance | 80mR |
| Drain to Source Voltage (Vdss) | 20V |
| Gate to Source Voltage (Vgs) | 8V |
| Input Capacitance | 310pF |
| Lead Free | Lead Free |
| Packaging | Bulk |
| Power Dissipation | 960mW |
| Reach SVHC Compliant | Yes |
| DC Rated Voltage | 20V |
Compliance
| RoHS | Not Compliant |
Datasheet
Rochester Electronics FDC6305N Datasheet
Download the complete datasheet for Rochester Electronics FDC6305N to view detailed technical specifications.
No datasheet is available for this part.