Rochester Electronics
FDC6310P
MOSFET Transistor, Dual P Channel, -2.2 A, -20 V, 0.1 ohm, -4.5 V, -1 V
Current Rating-2.2A
Power960mW
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Technical Specifications
Rochester Electronics FDC6310P technical specifications.
General
| Continuous Drain Current (ID) | 2.2A |
| Current Rating | -2.2A |
| Drain to Source Breakdown Voltage | 20V |
| Drain to Source Resistance | 125mR |
| Drain to Source Voltage (Vdss) | 20V |
| Gate to Source Voltage (Vgs) | 12V |
| Input Capacitance | 337pF |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Power Dissipation | 960mW |
| Reach SVHC Compliant | Yes |
| DC Rated Voltage | -20V |
Compliance
| RoHS | Not Compliant |
Datasheet
Rochester Electronics FDC6310P Datasheet
Download the complete datasheet for Rochester Electronics FDC6310P to view detailed technical specifications.
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