The FDC640P is a N-Channel MOSFET with a continuous drain current of 4.5mA and a current rating of -4.5A. It has a drain to source resistance of 53mR and a power dissipation of 1.6W. The device is lead free and compliant with Reach SVHC regulations. It is packaged in bulk and has an input capacitance of 890pF.
Rochester Electronics FDC640P technical specifications.
| Continuous Drain Current (ID) | 4.5mA |
| Current Rating | -4.5A |
| Drain to Source Resistance | 53mR |
| Drain to Source Voltage (Vdss) | 20V |
| Gate to Source Voltage (Vgs) | 12V |
| Input Capacitance | 890pF |
| Lead Free | Lead Free |
| Packaging | Bulk |
| Power Dissipation | 1.6W |
| Reach SVHC Compliant | Yes |
| DC Rated Voltage | -20V |
| RoHS | Not Compliant |
Download the complete datasheet for Rochester Electronics FDC640P to view detailed technical specifications.
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