The FDD6680AS is a 30V N-Channel MOSFET with a continuous drain current rating of 55A. It features a drain to source breakdown voltage of 30V and a drain to source resistance of 8.6 milliohms. The device is packaged in a TO-252 3-Pin package and is lead free. It is compliant with Reach SVHC regulations and is available in cut tape packaging.
PackageTO-252
Current Rating55A
Power60mW
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Technical Specifications
Rochester Electronics FDD6680AS technical specifications.
General
| Package/Case | TO-252 |
| Continuous Drain Current (ID) | 55A |
| Current Rating | 55A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 8.6mR |
| Drain to Source Voltage (Vdss) | 30V |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 1.2nF |
| Lead Free | Lead Free |
| Packaging | Cut Tape |
| Power Dissipation | 60mW |
| Reach SVHC Compliant | Yes |
| DC Rated Voltage | 30V |
Compliance
| RoHS | Not Compliant |
Datasheet
Rochester Electronics FDD6680AS Datasheet
Download the complete datasheet for Rochester Electronics FDD6680AS to view detailed technical specifications.
No datasheet is available for this part.