The FDFMA2P029Z is a N-channel junction field-effect transistor with a maximum continuous drain current of -3.1A and a maximum power dissipation of 1.4W. It has a drain to source resistance of 95mR and a drain to source voltage of -20V. The transistor is packaged in a MicroFET-6 package, which is 2mm x 2mm in size and 0.8mm in height. The package is lead-free and RoHS compliant. The transistor is suitable for use in a variety of applications where a high current and low resistance are required.
Current Rating-3.1A
Power1.4W
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Technical Specifications
Rochester Electronics FDFMA2P029Z technical specifications.
General
| Continuous Drain Current (ID) | -3.1A |
| Current Rating | -3.1A |
| Drain to Source Resistance | 95mR |
| Drain to Source Voltage (Vdss) | -20V |
| Input Capacitance | 720pF |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Power Dissipation | 1.4W |
| DC Rated Voltage | -20V |
Compliance
| RoHS | Not Compliant |
Datasheet
Rochester Electronics FDFMA2P029Z Datasheet
Download the complete datasheet for Rochester Electronics FDFMA2P029Z to view detailed technical specifications.
No datasheet is available for this part.