The FDN306P is a N-Channel MOSFET with a continuous drain current of 2.6A and a drain to source voltage of 12V. It has a drain to source resistance of 40mR and a power dissipation of 500mW. The device is lead free and compliant with Reach SVHC regulations. It is packaged in bulk and has an input capacitance of 454pF.
Current Rating-2.6A
Power500mW
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Technical Specifications
Rochester Electronics FDN306P technical specifications.
General
| Continuous Drain Current (ID) | 2.6A |
| Current Rating | -2.6A |
| Drain to Source Resistance | 40mR |
| Drain to Source Voltage (Vdss) | 12V |
| Gate to Source Voltage (Vgs) | 8V |
| Input Capacitance | 454pF |
| Lead Free | Lead Free |
| Packaging | Bulk |
| Power Dissipation | 500mW |
| Reach SVHC Compliant | Yes |
| DC Rated Voltage | -12V |
Compliance
| RoHS | Not Compliant |
Datasheet
Rochester Electronics FDN306P Datasheet
Download the complete datasheet for Rochester Electronics FDN306P to view detailed technical specifications.
No datasheet is available for this part.